FQD1N80, FQU1N80 دیتاشیت

FQD1N80, FQU1N80

مشخصات دیتاشیت

نام دیتاشیت FQD1N80, FQU1N80
حجم فایل 1486.189 کیلوبایت
نوع فایل pdf
تعداد صفحات 11

مشاهده دیتاشیت FQD1N80, FQU1N80

دانلود دیتاشیت

سایر مستندات

FQD1N80TM 11 pages

مشخصات فنی

  • RoHS: true
  • Type: N Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: onsemi FQD1N80TM
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 2.5W;45W
  • Total Gate Charge (Qg@Vgs): 7.2nC@10V
  • Drain Source Voltage (Vdss): 800V
  • Input Capacitance (Ciss@Vds): 195pF@25V
  • Continuous Drain Current (Id): 1A
  • Gate Threshold Voltage (Vgs(th)@Id): 5V@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 20Ω@10V,500mA
  • Package: TO-252
  • Manufacturer: onsemi
  • Series: QFET®
  • Packaging: Cut Tape (CT)
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 20Ohm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 195pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 45W (Tc)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Base Part Number: FQD1
  • detail: N-Channel 800V 1A (Tc) 2.5W (Ta), 45W (Tc) Surface Mount D-Pak

محصولات مشابه